The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 26, 2017
Filed:
Dec. 13, 2016
International Business Machines Corporation, Armonk, NY (US);
Cheng-Wei Cheng, White Plains, NY (US);
Pranita Kerber, Mount Kisco, NY (US);
Effendi Leobandung, Stormville, NY (US);
Amlan Majumdar, White Plains, NY (US);
Renee T. Mo, Yorktown Heights, NY (US);
Yanning Sun, Scarsdale, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A semiconductor structure containing a high mobility semiconductor channel material, i.e., a III-V semiconductor material, and asymmetrical source/drain regions located on the sidewalls of the high mobility semiconductor channel material is provided. The asymmetrical source/drain regions can aid in improving performance of the resultant device. The source region contains a source-side epitaxial doped semiconductor material, while the drain region contains a drain-side epitaxial doped semiconductor material and an underlying portion of the high mobility semiconductor channel material.