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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9984873 B1

PDFFull Text
Date of Patent:
May. 29, 2018

Filed:

Oct. 07, 2016

Preparation of low defect density of iii-v on si for device fabrication

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Cheng-Wei Cheng, White Plains, NY (US);

Devendra K. Sadana, Pleasantville, NY (US);

Kuen-Ting Shiu, Yorktown Heights, NY (US);

Yanning Sun, Scarsdale, NY (US);

Assignee:

INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);

Attorneys:

Cantor Colburn LLP

Louis Percello

Primary Examiner:

Eric Ward

Int. Cl.
CPC ...
H01L 29/205 (2006.01); H01L 21/02 (2006.01); H01L 29/10 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02546 (2013.01); H01L 21/0251 (2013.01); H01L 21/02178 (2013.01); H01L 21/02241 (2013.01); H01L 21/02381 (2013.01); H01L 21/02463 (2013.01); H01L 29/0692 (2013.01); H01L 29/1054 (2013.01); H01L 29/205 (2013.01); H01L 21/02255 (2013.01);
Abstract

A method of forming a semiconducting material includes depositing a graded buffer on a substrate to form a graded layer of an indium (In) containing III-V material, the In containing III-V material being indium-gallium-arsenic (InGaAs) or indium-aluminum-arsenic (InAlAs) and comprising In in an increasing atomic gradient up to 35 atomic % (at. %) based on total atomic weight of InGa or InAl; and forming a layer of InGaAs on the graded layer, the layer of InGaAs comprising about 25 to about 100 at. % In based on total atomic weight of InGa.

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