The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2018
Filed:
Feb. 19, 2016
International Business Machines Corporation, Armonk, NY (US);
Cheng-Wei Cheng, White Plains, NY (US);
Edward W. Kiewra, South Burlington, VT (US);
Amlan Majumdar, White Plains, NY (US);
Uzma Rana, Chappaqua, NY (US);
Devendra K. Sadana, Pleasantville, NY (US);
Kuen-Ting Shiu, Yorktown Heights, NY (US);
Yanning Sun, Scarsdale, NY (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Abstract
A method of forming a semiconductor substrate including a type III-V semiconductor material directly on a dielectric material that includes forming a trench in a dielectric layer, and forming a via within the trench extending from a base of the trench to an exposed upper surface of an underlying semiconductor including substrate. A III-V semiconductor material is formed extending from the exposed upper surface of the semiconductor substrate filling at least a portion of the trench.