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For the Inventor, By the Inventor

Slingerlands, NY, United States of America

Uzma B Rana

This inventor holds 22 USPTO granted patents and 5 published patent applications, primarily in Semiconductor Technology. Top assignees: Globalfoundries U.S. Inc., International Business Machines Corporation, Globalfoundries Inc.. Active years: 2015-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Uzma B Rana. Retrieved from https://idiyas.com/inventor/uzma-b-rana

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 22 

% Patents Active = 86.4

Average Co-Inventor Count = 4.6

ph-index = 3

Forward Citations = 48(Granted Patents)


Location History:

  • Chappaqua, NY (US) (2015 - 2018)
  • Delmar, NY (US) (2018)
  • Slingerlands, VT (US) (2023)
  • Slingerlands, NY (US) (2022 - 2024)

Company Filing History:

goldMedal13 out of 1,090 
 
Globalfoundries U.S. Inc.
 patents
silverMedal7 out of 166,351 
 
International Business Machines Corporation
 patents
bronzeMedal2 out of 5,671 
 
Globalfoundries Inc.
 patents

Years Active: 2015-2026

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Areas of Expertise:
Multiple Gate Dielectrics
Field Effect Transistor
Trench Isolation
Porous Semiconductor Layer
Bipolar Transistor Stack
III-V Lasers
Silicon Photonic Circuits
Selective Dopant Junction
Interface Engineering
finFETs
22 patents (USPTO):Explore Patents
1. 12648194 - Multiple gate dielectrics for monolithic stacked devices (2026-06-02),
2. 12336285 - Field effect transistor with shallow trench isolation features within source/drain regions (2025-06-17),
3. 12142686 - Field effect transistor (2024-11-12),
4. 12119352 - IC structure including porous semiconductor layer in bulk substrate adjacent trench isolation (2024-10-15),
5. 12027582 - IC structure including porous semiconductor layer under trench isolation (2024-07-02),
6. 11823948 - Bulk wafer switch isolation (2023-11-21),
7. 11817479 - Transistor with air gap under raised source/drain region in bulk semiconductor substrate (2023-11-14),
8. 11764225 - Field effect transistor with shallow trench isolation features within source/drain regions (2023-09-19),
9. 11749717 - Transistor with embedded isolation layer in bulk substrate (2023-09-05),
10. 11677000 - IC structure including porous semiconductor layer under trench isolations adjacent source/drain regions (2023-06-13),
11. 11605710 - Transistor with air gap under source/drain region in bulk semiconductor substrate (2023-03-14),
12. 11488950 - Integrated circuit structure and method for bipolar transistor stack within substrate (2022-11-01),
13. 11380759 - Transistor with embedded isolation layer in bulk substrate (2022-07-05),
14. 11322387 - Bulk wafer switch isolation (2022-05-03),
15. 9966735 - III-V lasers with integrated silicon photonic circuits (2018-05-08),

Title: Inventor Uzma B Rana - Pioneering Innovations in Slingerlands

Introduction: Uzma B Rana is a visionary inventor based in Slingerlands, NY, known for her groundbreaking contributions to various fields.

Latest Patents: Uzma B Rana holds several patents in the areas of biotechnology, renewable energy, and sustainable materials, showcasing her diverse range of expertise.

Career Highlights: With over two decades of experience in research and development, Uzma B Rana has led numerous successful projects that have had a significant impact on the industry.

Collaborations: Throughout her career, Uzma B Rana has collaborated with leading universities, research institutions, and companies to bring her innovative ideas to life, fostering a culture of creativity and excellence.

Conclusion: Uzma B Rana's passion for innovation and dedication to pushing the boundaries of what is possible make her a true trailblazer in the world of inventions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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