The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2025
Filed:
Aug. 08, 2023
Applicant:
Globalfoundries U.s. Inc., Malta, NY (US);
Inventors:
Anthony K. Stamper, Burlington, VT (US);
Uzma Rana, Slingerlands, VT (US);
Siva P. Adusumilli, South Burlington, VT (US);
Steven M. Shank, Jericho, VT (US);
Assignee:
GLOBALFOUNDRIES U.S. Inc., Malta, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H10D 86/00 (2025.01); H01L 21/28 (2025.01); H01L 21/285 (2006.01); H10D 64/62 (2025.01); H10D 64/66 (2025.01); H10D 86/01 (2025.01);
U.S. Cl.
CPC ...
H10D 86/201 (2025.01); H01L 21/28052 (2013.01); H01L 21/28518 (2013.01); H10D 64/62 (2025.01); H10D 64/663 (2025.01); H10D 86/01 (2025.01);
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to field effect transistors and methods of manufacture. The structure includes: at least one gate structure comprising source/drain regions; and at least one isolation structure perpendicular to the at least one gate structure and within the source/drain regions.
Stamper, Anthony. (2025). Field effect transistor with shallow trench isolation features within source/drain regions (U.S. Patent No. 12336285). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12336285
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile