The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2024
Filed:
May. 26, 2021
Applicant:
Globalfoundries U.s. Inc., Malta, NY (US);
Inventors:
Anthony K. Stamper, Burlington, VT (US);
Uzma Rana, Slingerlands, NY (US);
Steven M. Shank, Jericho, VT (US);
Mark D. Levy, Williston, VT (US);
Assignee:
GLOBALFOUNDRIES U.S. Inc., Malta, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78603 (2013.01); H01L 29/0653 (2013.01); H01L 29/66742 (2013.01); H01L 29/78645 (2013.01);
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to field effect transistors and methods of manufacture. The structure includes: at least one gate structure having source/drain regions; at least one isolation structure within the source/drain regions in a substrate material; and semiconductor material on a surface of the at least one isolation structure in the source/drain regions.