Company Filing History:

17 out of 5,491

Freescale Semiconductor,inc.

Years Active: 2007-2017

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19 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 9601614 - Composite semiconductor device with different channel widths (2017-03-21),

2. 9589967 - Fast programming antifuse and method of manufacture (2017-03-07),

3. 9466712 - Resurf semiconductor device charge balancing (2016-10-11),

4. 9159803 - Semiconductor device with HCI protection region (2015-10-13),

5. 9136323 - Drain-end drift diminution in semiconductor devices (2015-09-15),

6. 9041103 - RESURF semiconductor device charge balancing (2015-05-26),

7. 8853780 - Semiconductor device with drain-end drift diminution (2014-10-07),

8. 8389366 - Resurf semiconductor device charge balancing (2013-03-05),

9. 8329514 - Methods for forming antifuses with curved breakdown regions (2012-12-11),

10. 8319283 - Laterally diffused metal oxide semiconductor (LDMOS) device with multiple gates and doped regions (2012-11-27),

11. 8049299 - Antifuses with curved breakdown regions (2011-11-01),

12. 7834417 - Antifuse elements (2010-11-16),

13. 7795702 - Microelectronic assemblies with improved isolation voltage performance (2010-09-14),

14. 7795674 - Dual gate LDMOS devices (2010-09-14),

15. 7700405 - Microelectronic assembly with improved isolation voltage performance and a method for forming the same (2010-04-20),

Title: **Won Gi Min: Innovator in Semiconductor Technologies**

Introduction

Won Gi Min, a prominent inventor based in Chandler, AZ, has made significant contributions to the field of semiconductor technology. With 19 patents credited to his name, his innovations highlight the advancement of electronic components and devices.

Latest Patents

Among his latest works, the patent for a **Composite Semiconductor Device with Different Channel Widths** stands out. This invention comprises a semiconductor substrate featuring two types of constituent transistors connected in parallel, differing in channel widths to optimize performance. Additionally, his patent titled **Fast Programming Antifuse and Method of Manufacture** describes a novel antifuse configuration. It includes an isolation trench and an electrode setup that enables controlled rupturing of an insulating layer, facilitating an efficient current path through the substrate.

Career Highlights

Won Gi Min has lent his expertise to several leading technology firms, including Freescale Semiconductor, Inc. and NXP USA, Inc. During his tenure in these corporations, he played a crucial role in the development and enhancement of semiconductor technologies that are integral to modern electronic devices.

Collaborations

His innovative journey has been marked by collaborations with distinguished colleagues such as Jiang-kai Zuo and Hongning Yang. These partnerships have fostered an environment conducive to creativity and invention, leading to several successful patent applications and advancements in semiconductor technologies.

Conclusion

In conclusion, Won Gi Min's impressive portfolio of patents and his contributions to the semiconductor industry reflect his dedication to innovation. His work continues to pave the way for future developments in technology, showcasing the impact of inventive minds in the ever-evolving landscape of electronics.

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