The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 2010
Filed:
Sep. 16, 2009
Hongning Yang, Chandler, AZ (US);
Veronique C. Macary, Chandler, AZ (US);
Won Gi Min, Chandler, AZ (US);
Jiang-kai Zuo, Chandler, AZ (US);
Hongning Yang, Chandler, AZ (US);
Veronique C. Macary, Chandler, AZ (US);
Won Gi Min, Chandler, AZ (US);
Jiang-Kai Zuo, Chandler, AZ (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
An embodiment of an N-channel device has a lightly doped substrate in which adjacent or spaced-apart P and N wells are provided. A lateral isolation wall surrounds at least a portion of the substrate and is spaced apart from the wells. A first gate overlies the P well or the substrate between the wells or partly both. A second gate, spaced apart from the first gate, overlies the N-well. A body contact to the substrate is spaced apart from the isolation wall by a first distance within the space charge region of the substrate to isolation wall PN junction. When the body contact is connected to the second gate, a predetermined static bias Vgis provided to the second gate, depending upon the isolation wall bias (Vbias) and the first distance.