Company Filing History:
Years Active: 2009-2010
Title: Veronique C Macary: Innovator in Microelectronics
Introduction
Veronique C Macary is a prominent inventor based in Chandler, AZ (US). She has made significant contributions to the field of microelectronics, holding a total of 5 patents. Her work focuses on enhancing the performance and efficiency of semiconductor devices.
Latest Patents
One of her latest patents is for dual gate LDMOS devices. This invention features an N-channel device with a lightly doped substrate, where adjacent P and N wells are strategically placed. A lateral isolation wall surrounds part of the substrate, and the design includes a first gate overlying the P well and a second gate over the N well. This configuration allows for improved static bias control, enhancing device performance.
Another notable patent involves microelectronic assemblies with improved isolation voltage performance. This innovation includes first and second semiconductor devices formed over a substrate, with buried regions and barrier regions designed to optimize electrical performance. The arrangement of these components ensures better isolation and functionality in microelectronic applications.
Career Highlights
Veronique C Macary is currently employed at Freescale Semiconductor, Inc., where she continues to push the boundaries of microelectronic technology. Her expertise in semiconductor design and innovation has made her a valuable asset to her team and the industry.
Collaborations
Throughout her career, Veronique has collaborated with talented individuals such as Jiang-kai Zuo and Won Gi Min. These partnerships have fostered a creative environment that encourages innovation and the development of cutting-edge technologies.
Conclusion
Veronique C Macary is a trailblazer in the field of microelectronics, with a strong portfolio of patents that reflect her innovative spirit. Her contributions continue to shape the future of semiconductor technology, making her a key figure in the industry.