The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 21, 2017

Filed:

Mar. 26, 2015
Applicants:

Won Gi Min, Chandler, AZ (US);

Pete Rodriquez, Phoenix, AZ (US);

Hongning Yang, Chandler, AZ (US);

Jiang-kai Zuo, Chandler, AZ (US);

Inventors:

Won Gi Min, Chandler, AZ (US);

Pete Rodriquez, Phoenix, AZ (US);

Hongning Yang, Chandler, AZ (US);

Jiang-Kai Zuo, Chandler, AZ (US);

Assignee:

NXP USA, INC., Austin, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 27/02 (2006.01); H01L 29/08 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7816 (2013.01); H01L 27/0211 (2013.01); H01L 29/0696 (2013.01); H01L 29/0847 (2013.01); H01L 29/1033 (2013.01); H01L 29/1095 (2013.01); H01L 29/66681 (2013.01); H01L 29/7835 (2013.01); H01L 29/0653 (2013.01); H01L 29/1045 (2013.01);
Abstract

A device includes a semiconductor substrate, a first constituent transistor including a first plurality of transistor structures in the semiconductor substrate connected in parallel with one another, and a second constituent transistor including a second plurality of transistor structures in the semiconductor substrate connected in parallel with one another. The first and second constituent transistors are disposed laterally adjacent to one another and connected in parallel with one another. Each transistor structure of the first plurality of transistor structures has a lower resistance in a saturation region of operation than each transistor structure of the second plurality of transistor structures.


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