The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2015
Filed:
Aug. 21, 2012
Applicants:
Won Gi Min, Chandler, AZ (US);
Hongning Yang, Chandler, AZ (US);
Jiangkai Zuo, Chandler, AZ (US);
Inventors:
Assignee:
Freescale Semiconductor, Inc., Austin, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/40 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66659 (2013.01); H01L 29/0619 (2013.01); H01L 29/0646 (2013.01); H01L 29/0653 (2013.01); H01L 29/7835 (2013.01); H01L 29/063 (2013.01); H01L 29/0847 (2013.01); H01L 29/1083 (2013.01); H01L 29/402 (2013.01);
Abstract
A device includes a semiconductor substrate, a drift region in the semiconductor substrate and having a first conductivity type, an isolation region within the drift region, and around which charge carriers drift on a path through the drift region during operation, and a protection region adjacent the isolation region in the semiconductor substrate, having a second conductivity type, and disposed along a surface of the semiconductor substrate.