The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2015
Filed:
Sep. 15, 2014
Hongning Yang, Chandler, AZ (US);
Daniel J. Blomberg, Chandler, AZ (US);
Xu Cheng, Chandler, AZ (US);
Xin Lin, Phoenix, AZ (US);
Won Gi Min, Chandler, AZ (US);
Zhihong Zhang, Chandler, AZ (US);
Jiang-kai Zuo, Chandler, AZ (US);
Hongning Yang, Chandler, AZ (US);
Daniel J. Blomberg, Chandler, AZ (US);
Xu Cheng, Chandler, AZ (US);
Xin Lin, Phoenix, AZ (US);
Won Gi Min, Chandler, AZ (US);
Zhihong Zhang, Chandler, AZ (US);
Jiang-Kai Zuo, Chandler, AZ (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A method of fabricating a transistor includes forming a field isolation region in a substrate. After forming the field isolation region, dopant is implanted in a first region of a substrate for formation of a drift region. A drain region is formed in a second region of the substrate. The first and second regions laterally overlap to define a conduction path for the transistor. The first region does not extend laterally across the second region.