The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2014
Filed:
May. 07, 2012
Hongning Yang, Chandler, AZ (US);
Daniel J. Blomberg, Chandler, AZ (US);
Xu Cheng, Chandler, AZ (US);
Xin Lin, Phoenix, AZ (US);
Won Gi Min, Chandler, AZ (US);
Zhihong Zhang, Chandler, AZ (US);
Jiang-kai Zuo, Chandler, AZ (US);
Hongning Yang, Chandler, AZ (US);
Daniel J. Blomberg, Chandler, AZ (US);
Xu Cheng, Chandler, AZ (US);
Xin Lin, Phoenix, AZ (US);
Won Gi Min, Chandler, AZ (US);
Zhihong Zhang, Chandler, AZ (US);
Jiang-Kai Zuo, Chandler, AZ (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A device includes a semiconductor substrate, source and drain regions in the semiconductor substrate, a channel region in the semiconductor substrate between the source and drain regions through which charge carriers flow during operation from the source region to the drain region, and a drift region in the semiconductor substrate, on which the drain region is disposed, and through which the charge carriers drift under an electric field arising from application of a bias voltage between the source and drain regions. A PN junction along the drift region includes a first section at the drain region and a second section not at the drain region. The drift region has a lateral profile that varies such that the first section of the PN junction is shallower than the second section of the PN junction.