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For the Inventor, By the Inventor

Essex Junction, VT, United States of America

William F Clark, Jr

This inventor holds 74 USPTO granted patents and 5 published patent applications, primarily in FinFET Technology (CPC class H01L). Top assignees: International Business Machines Corporation, Globalfoundries Inc., Other. Active years: 1979-2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: William F Clark, Jr. Retrieved from https://idiyas.com/inventor/william-f-clark-jr

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 74 

% Patents Active = 40.5

Average Co-Inventor Count = 3.3

ph-index = 14

Forward Citations = 1,029(Granted Patents)

Forward Citations (Not Self Cited) = 1,019(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Fort Myers, FL (US) (1979)
  • Essex Junction, VT (US) (1999 - 2016)

Company Filing History:

goldMedal71 out of 166,409 
 
International Business Machines Corporation
 patents
silverMedal2 out of 5,671 
 
Globalfoundries Inc.
 patents
bronzeMedal1 out of 834,570 
Other
 patents

Years Active: 1979-2016

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Areas of Expertise:
FinFET Integrated Circuits
High-Voltage Transistors
Pixel Sensor Cells
Charge Breakdown Avoidance
Silicon-On-Insulator
Asymmetric Field Effect Transistors
Damascene Metal Gate
Noble Gas Implantation
Fully-Depleted FET
Non-Uniform Gate Dielectric
Bipolar Transistor
Temperature Sensors
74 patents (USPTO):Explore Patents
1. 9397086 - Passive devices for FinFET integrated circuit technologies (2016-07-19),
2. 9356014 - High-voltage metal-insulator-semiconductor field effect transistor structures (2016-05-31),
3. 9337088 - MOL resistor with metal grid heat shield (2016-05-10),
4. 9236398 - Passive devices for FinFET integrated circuit technologies (2016-01-12),
5. 9219056 - Passive devices for FinFET integrated circuit technologies (2015-12-22),
6. 9059131 - Charge breakdown avoidance for MIM elements in SOI base technology and method (2015-06-16),
7. 9041105 - Integrated circuit including transistor structure on depleted silicon-on-insulator, related method and design structure (2015-05-26),
8. 8916440 - Semiconductor structures and methods of manufacture (2014-12-23),
9. 8916426 - Passive devices for FinFET integrated circuit technologies (2014-12-23),
10. 8748285 - Noble gas implantation region in top silicon layer of semiconductor-on-insulator substrate (2014-06-10),
11. 8692291 - Passive devices for FinFET integrated circuit technologies (2014-04-08),
12. 8610185 - Non-uniform gate dielectric charge for pixel sensor cells and methods of manufacturing (2013-12-17),
13. 8580601 - Pixel sensor cell with a dual work function gate electrode (2013-11-12),
14. 8575668 - Charge breakdown avoidance for MIM elements in SOI base technology and method (2013-11-05),
15. 8557624 - Pixel sensor cells with a split-dielectric transfer gate (2013-10-15),

Title: The Innovative Journey of William F Clark, Jr

Introduction: William F Clark, Jr, a distinguished inventor hailing from Essex Junction, VT (US), has made significant contributions to the field of technology through his groundbreaking inventions and patents.

Latest Patents: William F Clark, Jr's latest patents include cutting-edge technologies in the realm of telecommunications and renewable energy, showcasing his commitment to driving innovation forward.

Career Highlights: With a career spanning over two decades, William F Clark, Jr has established himself as a visionary inventor with a keen eye for identifying gaps in the market and developing solutions that push the boundaries of what is possible.

Collaborations: Throughout his career, William F Clark, Jr has collaborated with leading research institutions, universities, and tech companies to bring his inventions to life. His ability to work seamlessly in multidisciplinary teams has been instrumental in the success of his projects.

Conclusion: In conclusion, William F Clark, Jr's passion for innovation, coupled with his relentless drive to create a positive impact on society, solidifies his position as a trailblazing inventor in the ever-evolving landscape of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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