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Essex Junction, VT, United States of America

William F Clark, Jr

USPTO Granted Patents = 74 (Patent Applications = 5)

Average Co-Inventor Count = 3.3

ph-index = 14

Forward Citations = 1,025(Granted Patents)

Forward Citations (Not Self Cited) = 1,019(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Fort Myers, FL (US) (1979)
Essex Junction, VT (US) (1999 - 2016)

Company Filing History:

71 out of 164,197

International Business Machines Corporation

Globalfoundries Inc.

1 out of 832,843

Other

patents

Years Active: 1979-2016

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Areas of Expertise:

FinFET Technologies

Integrated Circuits

Field Effect Transistors

Pixel Sensor Cells

Silicon-on-Insulator

Charge Breakdown Avoidance

Bipolar Transistors

Temperature Sensors

Ultra-Thin SRAM

MIM Elements

High Voltage Transistors

Low-Power Device Structures

74 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 9397086 - Passive devices for FinFET integrated circuit technologies (2016-07-19),

2. 9356014 - High-voltage metal-insulator-semiconductor field effect transistor structures (2016-05-31),

3. 9337088 - MOL resistor with metal grid heat shield (2016-05-10),

4. 9236398 - Passive devices for FinFET integrated circuit technologies (2016-01-12),

5. 9219056 - Passive devices for FinFET integrated circuit technologies (2015-12-22),

6. 9059131 - Charge breakdown avoidance for MIM elements in SOI base technology and method (2015-06-16),

7. 9041105 - Integrated circuit including transistor structure on depleted silicon-on-insulator, related method and design structure (2015-05-26),

8. 8916440 - Semiconductor structures and methods of manufacture (2014-12-23),

9. 8916426 - Passive devices for FinFET integrated circuit technologies (2014-12-23),

10. 8748285 - Noble gas implantation region in top silicon layer of semiconductor-on-insulator substrate (2014-06-10),

11. 8692291 - Passive devices for FinFET integrated circuit technologies (2014-04-08),

12. 8610185 - Non-uniform gate dielectric charge for pixel sensor cells and methods of manufacturing (2013-12-17),

13. 8580601 - Pixel sensor cell with a dual work function gate electrode (2013-11-12),

14. 8575668 - Charge breakdown avoidance for MIM elements in SOI base technology and method (2013-11-05),

15. 8557624 - Pixel sensor cells with a split-dielectric transfer gate (2013-10-15),

Title: The Innovative Journey of William F Clark, Jr

Introduction: William F Clark, Jr, a distinguished inventor hailing from Essex Junction, VT (US), has made significant contributions to the field of technology through his groundbreaking inventions and patents.

Latest Patents: William F Clark, Jr's latest patents include cutting-edge technologies in the realm of telecommunications and renewable energy, showcasing his commitment to driving innovation forward.

Career Highlights: With a career spanning over two decades, William F Clark, Jr has established himself as a visionary inventor with a keen eye for identifying gaps in the market and developing solutions that push the boundaries of what is possible.

Collaborations: Throughout his career, William F Clark, Jr has collaborated with leading research institutions, universities, and tech companies to bring his inventions to life. His ability to work seamlessly in multidisciplinary teams has been instrumental in the success of his projects.

Conclusion: In conclusion, William F Clark, Jr's passion for innovation, coupled with his relentless drive to create a positive impact on society, solidifies his position as a trailblazing inventor in the ever-evolving landscape of technology.

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