The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2014
Filed:
Mar. 27, 2012
William F. Clark, Jr., Essex Junction, VT (US);
Robert J. Gauthier, Jr., Hinesburg, VT (US);
Junjun LI, Williston, VT (US);
William F. Clark, Jr., Essex Junction, VT (US);
Robert J. Gauthier, Jr., Hinesburg, VT (US);
Junjun Li, Williston, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Device structures, design structures, and fabrication methods for passive devices that may be used as electrostatic discharge protection devices in fin-type field-effect transistor integrated circuit technologies. A device structure is formed that includes a well of a first conductivity type in a device region and a doped region of a second conductivity in the well. The device region is comprised of a portion of a device layer of a semiconductor-on-insulator substrate. The doped region and a first portion of the well define a junction. A second portion of the well is positioned between the doped region and an exterior sidewall of the device region. Another portion of the device layer may be patterned to form fins for fin-type field-effect transistors.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile