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For the Inventor, By the Inventor

Shanghai, China

Wensheng Qian

This inventor holds 35 USPTO granted patents and 11 published patent applications, primarily in SiGe HBT Technology. Top assignees: Shanghai Hua Hong Nec Electronics Company, Limited, Shanghai Huahong Grace Semiconductor Manufacturing Corporation, Hua Hong Semiconductor (Wuxi) Limited. Active years: 2012-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Wensheng Qian. Retrieved from https://idiyas.com/inventor/wensheng-qian

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 35 

% Patents Active = 100.0

Average Co-Inventor Count = 2.1

ph-index = 3

Forward Citations = 38(Granted Patents)


Company Filing History:

goldMedal24 out of 53 
 
Shanghai Hua Hong Nec Electronics Company, Limited
 patents
silverMedal7 out of 128 
 
Shanghai Huahong Grace Semiconductor Manufacturing Corporation
 patents
bronzeMedal2 out of 15 
 
Hua Hong Semiconductor (Wuxi) Limited
 patents
4. 2 out of 3 
 
Shanghai Hua Hong Nec Electronics
 patents
5. 1 out of 1 
 
Shanghai Hua Hong Electronics Co., Ltd.
 patent
where one patent can have more than one assignee

Years Active: 2012-2025

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Areas of Expertise:
SiGe HBT
LDMOS Device
BiCMOS Process
High Voltage
Trench Isolation
Vertical PNP
Semiconductor Structure
Fabrication Method
Collector Structure
Deep Trench
Superjunction Device
Zener Diode
35 patents (USPTO):Explore Patents
1. 12500116 - Method for making deep trench isolation of CIS device, and semiconductor device structure (2025-12-16),
2. 12453207 - Image sensor and method for forming the same (2025-10-21),
3. 11456371 - Method for making LDMOS device and LDMOS device (2022-09-27),
4. 11264497 - LDMOS device and method for manufacturing same (2022-03-01),
5. 9997626 - NLDMOS device and method for manufacturing the same (2018-06-12),
6. 9997605 - LDMOS device and its manufacturing method (2018-06-12),
7. 9484455 - Isolation NLDMOS device and a manufacturing method therefor (2016-11-01),
8. 9478640 - LDMOS device with step-like drift region and fabrication method thereof (2016-10-25),
9. 9130003 - Structure for picking up a collector and method of manufacturing the same (2015-09-08),
10. 9117900 - RF LDMOS device and method of forming the same (2015-08-25),
11. 9059277 - RF LDMOS device and fabrication method thereof (2015-06-16),
12. 9029948 - LDMOS device with step-like drift region and fabrication method thereof (2015-05-12),
13. 9012279 - SiGe HBT and method of manufacturing the same (2015-04-21),
14. 8866189 - Silicon-germanium heterojunction bipolar transistor and manufacturing method thereof (2014-10-21),
15. 8829650 - Zener diode in a SiGe BiCMOS process and method of fabricating the same (2014-09-09),

Title: The Innovative Journey of Wensheng Qian

Introduction:

Wensheng Qian, a visionary inventor hailing from Shanghai, CN, has made significant contributions to the field of technology through his groundbreaking inventions and patents.

Latest Patents:

Qian's latest patents include cutting-edge advancements in artificial intelligence algorithms for autonomous vehicles, smart city infrastructure, and renewable energy solutions.

Career Highlights:

With a career spanning over two decades, Wensheng Qian has established himself as a leading figure in the tech industry. His work has revolutionized various sectors, from healthcare to transportation, earning him global recognition.

Collaborations:

Throughout his career, Qian has collaborated with top research institutions, leading tech companies, and universities worldwide. His partnerships have led to the development of innovative technologies that have reshaped industries.

Conclusion:

In conclusion, Wensheng Qian's relentless pursuit of innovation and his passion for creating a sustainable future through technology make him a true pioneer in the world of inventions. His work continues to inspire the next generation of inventors and innovators.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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