The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2015
Filed:
Jan. 03, 2014
Shanghai Huahong Grace Semiconductor Manufacturing Corporation, Shanghai, CN;
Wensheng Qian, Shanghai, CN;
Abstract
An RF LDMOS device is disclosed, including: a substrate having a first conductivity type; a channel doped region having the first conductivity type and a drift region having a second conductivity type, each in an upper portion of the substrate, the channel doped region having a first end in lateral contact with a first end of the drift region; a first well having the first conductivity type in the substrate, the first well having a top portion in contact with both of a bottom of the first end of the channel doped region and a bottom of the first end of the drift region; and a second well having the first conductivity type in the substrate, the second well having a top portion in contact with a bottom of a second end of the drift region. A method of forming such an RF LDMOS device is also disclosed.