For the Inventor, By the Inventor

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Shanghai, China

Shanghai Huahong Grace Semiconductor Manufacturing Corporation

USPTO Granted Patents = 123

Forward Citations = 97

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117 inventors (with patents filed for the assignee):

Guangjun Yang (15 out of 17 patents)

Jun Xiao (9 out of 12 patents)

Jian Hu (7 out of 13 patents)

4. Wensheng Qian (7 out of 35 patents)

5. Weiran Kong (6 out of 7 patents)

6. Binghan Li (6 out of 6 patents)

7. Longjie Zhao (5 out of 5 patents)

8. Tao Wang (5 out of 22 patents)

9. Jiye Yang (4 out of 4 patents)

10. Tao Yu (4 out of 22 patents)

11. Jing Gu (4 out of 46 patents)

12. Mingyong Huang (4 out of 4 patents)

13. Ruofan Dai (4 out of 4 patents)

14. Junjun Xing (4 out of 4 patents)

15. Jia Pan (4 out of 6 patents)

Core Competencies:

RFLDMOS Device

Image Sensor

Embedded SONOS Memory

IGBT Device

Flash Memory

Trench Gate Device

Super-Junction Structure

Power Semiconductor Device

RF Switching System

Electrically Programmable Fuse

Split-Gate Flash Memory

MOSFET

123 patents: Sort by Forward Citations

1. 12507435 - Shield gate trench MOSFET device and method for manufacturing the same (2025-12-23),

2. 12501641 - Shielded gate MOSFET device and manufacturing method thereof (2025-12-16),

3. 12453207 - Image sensor and method for forming the same (2025-10-21),

4. 12451446 - RFLDMOS device and manufacturing method thereof (2025-10-21),

5. 12414300 - Embedded SONOS memory and method of making the same (2025-09-09),

6. 12310069 - IGBT device and method of making the same (2025-05-20),

7. 12009031 - Memory array (2024-06-11),

8. 11728438 - Split-gate memory device and method of forming same (2023-08-15),

9. 11726400 - Lithography process method for defining sidewall morphology of lithography pattern (2023-08-15),

10. 11646344 - Method for making super junction device (2023-05-09),

11. 11646088 - Flash memory programming check circuit (2023-05-09),

12. 11600627 - Memory and method for forming the same (2023-03-07),

13. 11588040 - LDMOS device and method for forming the same (2023-02-21),

14. 11563103 - Method for manufacturing IGBT device (2023-01-24),

15. 11545498 - OTP memory and method for making the same (2023-01-03),

Shanghai Huahong Grace Semiconductor Manufacturing Corporation (HHGrace) is a leading integrated circuit (IC) foundry located in Shanghai, China. The company specializes in the manufacturing and development of semiconductor products for various industries including consumer electronics, automotive, telecommunications, and more. With advanced technologies and state-of-the-art facilities, HHGrace offers a wide range of services including wafer fabrication, packaging, testing, and design support. The company is committed to providing reliable and high-quality semiconductor solutions to meet the evolving demands of the global market.

This text is generated by artificial intelligence and may not be accurate.

Company Badge

USPTO Data Jan 1 1976 - Dec 23 2025

123 Patents

#27 in Shanghai

#256 in China

#6,312 in the World

Shanghai, China

Shanghai Huahong Grace Semiconductor Manufacturing Corporation

Forward Citations = 97

117 inventors:

Guangjun Yang (15 out of 17 patents)

Jun Xiao (9 out of 12 patents)

Jian Hu (7 out of 13 patents)

4. Wensheng Qian (7 out of 35 patents)

5. Weiran Kong (6 out of 7 patents)

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