The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2025
Filed:
Aug. 16, 2022
Applicant:
Shanghai Huahong Grace Semiconductor Manufacturing Corporation, Shanghai, CN;
Inventors:
Ning Wang, Shanghai, CN;
Kegang Zhang, Shanghai, CN;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 43/35 (2023.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H10D 30/01 (2025.01);
U.S. Cl.
CPC ...
H10B 43/35 (2023.02); H01L 21/0214 (2013.01); H01L 21/28035 (2013.01); H10D 30/0413 (2025.01);
Abstract
An embedded SONOS memory and a method for making the same. The method includes: forming a connecting layer on one side of a selection transistor polysilicon gate; forming a second silicon oxide layer and an ONO charge storage layer on the other side of the selection transistor polysilicon gate far away from the connecting layer; then forming a memory transistor polysilicon gate on the side of the second silicon oxide layer far away from the connecting layer, so as to obtain the selection transistor polysilicon gate and the memory transistor polysilicon gate in a back-to-back structure.