Company Filing History:
Years Active: 2021-2025
Title: Kegang Zhang: Innovator in Embedded Memory Technology
Introduction
Kegang Zhang is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology, particularly in embedded memory systems. With a total of 3 patents to his name, Zhang continues to push the boundaries of innovation in this critical area.
Latest Patents
One of Kegang Zhang's latest patents is for an embedded SONOS memory and a method of making the same. This invention involves forming a connecting layer on one side of a selection transistor polysilicon gate. It also includes the formation of a second silicon oxide layer and an ONO charge storage layer on the opposite side of the selection transistor polysilicon gate. The method culminates in the creation of a memory transistor polysilicon gate, resulting in a back-to-back structure of the selection and memory transistor polysilicon gates. Another notable patent is for a memory array that consists of multiple storage cells, bit lines, memory transistor word lines, and selection transistor word lines. Each storage cell is designed with a selection transistor and a memory transistor connected in series, enhancing the efficiency and performance of memory storage.
Career Highlights
Kegang Zhang is currently employed at Shanghai Huahong Grace Semiconductor Manufacturing Corporation. His work at this leading semiconductor company has allowed him to develop and refine his innovative ideas in embedded memory technology. Zhang's expertise and dedication have positioned him as a key player in the industry.
Collaborations
Throughout his career, Kegang Zhang has collaborated with talented individuals such as Ning Wang and Hualun Chen. These partnerships have fostered a creative environment that encourages the exchange of ideas and advancements in technology.
Conclusion
Kegang Zhang is a notable inventor whose work in embedded memory technology has made a significant impact in the semiconductor industry. His innovative patents and collaborations highlight his commitment to advancing technology and improving memory systems.