The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 13, 2021
Filed:
Jun. 18, 2019
Shanghai Huahong Grace Semiconductor Manufacturing Corporation, Shanghai, CN;
Kegang Zhang, Shanghai, CN;
Hualun Chen, Shanghai, CN;
Abstract
A SONOS nonvolatile memory includes a second gate structure of a selectron isolated from a first gate structure of a memotron by an inter-gate dielectric isolation layer formed on a first side of the first gate structure through self-alignment. The second gate structure is formed on a first side of the inter-gate dielectric isolation layer through self-alignment. A cell structure is formed by two adjacent cell structures. A first window defines an area formed by the two first gate structures. Two sides of each first gate structure are defined through self-alignment by first top silicon nitride layers formed on inner sides of the first window. First silicon nitride spacers are formed on second sides of the first gate structures through self-alignment. The bottom area of a contact hole between the second sides of the first gate structures is defined through self-alignment by the two first silicon nitride spacers.