Guangjun Yang

Title: Innovations of Guangjun Yang

Introduction

Guangjun Yang is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology, holding a total of 17 patents. His work focuses on enhancing the efficiency and functionality of memory devices.

Latest Patents

One of Guangjun Yang's latest patents is a method of controlling internal addresses for a serial NOR flash memory. This invention discloses a serial flash memory that includes a memory array, a row decoder, a column decoder, a control module, and an SPI interface. The control module features a row enable signal that activates when the last bit of an SPI row address is read. This innovation allows for relaxed timing requirements on the row address, reduces the area of the row decoder, and minimizes the area of the row drive circuit. Another notable patent is related to a charge pump circuit. This charge pump unit structure includes a booster circuit unit, a positive pump transfer unit, and a negative pump transfer unit. The design incorporates control signals to manage the operation of the positive and negative pump transfer units effectively.

Career Highlights

Guangjun Yang has worked with notable companies in the semiconductor industry, including Shanghai Huahong Grace Semiconductor Manufacturing Corporation and Grace Semiconductor Manufacturing Corporation. His experience in these organizations has contributed to his expertise in developing innovative technologies.

Collaborations

Guangjun Yang has collaborated with several professionals in his field, including Jian Hu and Jun Xiao. These partnerships have facilitated the exchange of ideas and advancements in semiconductor technology.

Conclusion

Guangjun Yang's contributions to the field of semiconductor technology through his patents and collaborations highlight his role as an influential inventor. His work continues to impact the industry positively.