The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 19, 2016

Filed:

Dec. 14, 2015
Applicant:

Shanghai Huahong Grace Semiconductor Manufacturing Corporation, Shanghai, CN;

Inventor:

Guangjun Yang, Shanghai, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 16/12 (2006.01); H01L 27/115 (2006.01); G11C 16/14 (2006.01); G11C 16/26 (2006.01);
U.S. Cl.
CPC ...
G11C 16/12 (2013.01); G11C 16/14 (2013.01); G11C 16/26 (2013.01); H01L 27/11536 (2013.01); H01L 27/11541 (2013.01);
Abstract

Memory, and erasing, programming and reading method thereof are provided. In the memory, a first isolation cell, a second isolation cell and a memory cell have same structure. A first doped region of the memory cell and a second doped region of the first isolation cell are connected with a first bit line, a second doped region of the memory cell and a first doped region of the second isolation cell are connected with a second bit line. A first doped region of the first isolation cell serves as a connection terminal thereof, first and second control gate structures of the first isolation cell are connected together to serve as a control terminal thereof, a second doped region of the second isolation cell serves as a connection terminal thereof, first and second control gate structures of the second isolation cell are connected together to serve as a control terminal thereof.


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