The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2015
Filed:
Dec. 30, 2013
Shanghai Huahong Grace Semiconductor Manufacturing Corporation, Shanghai, CN;
Guangjun Yang, Shanghai, CN;
Abstract
Charge pump circuit and memory are provided. The charge pump circuit includes a clock driving unit, a voltage boosting unit, a boosting swing control unit, a first and second NMOS tubes, a first and second current mirror units. The clock driving unit is adapted to form and output clock driving signals to the voltage boosting unit. The voltage boosting unit is adapted to boost voltage and output it to the boosting swing control unit and the first current minor unit. The boosting swing control unit is adapted to output boosting swing control signals to the first NMOS tube. The first current minor unit is to output first mirror current and the second current minor unit is to minor the first mirror current and output second minor current. Frequency of the clock driving signal varies with leakage current load, and size of the charge pump circuit and power consumption are reduced.