The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 07, 2023

Filed:

Jun. 23, 2020
Applicant:

Shanghai Huahong Grace Semiconductor Manufacturing Corporation, Shanghai, CN;

Inventor:

Tao Yu, Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11517 (2017.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); G11C 5/02 (2006.01); H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11517 (2013.01); G11C 5/025 (2013.01); H01L 29/42328 (2013.01); H01L 29/66825 (2013.01); H01L 29/788 (2013.01);
Abstract

The present disclosure provides a memory and a method for forming the memory. The memory includes: a substrate including a first storage area and a second storage area; a source region disposed in the substrate between the first storage area and the second storage area; a first drain region and a second drain region in the substrate on both sides of the first storage area and the second storage area; a first storage structure disposed on the first storage area, including a first storage unit, a second storage unit, and a first word line gate; and a second storage structure disposed on the second storage area, including a third storage unit, a fourth storage unit, and a second word line gate. The memory can obtain an improved performance.


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