The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2025
Filed:
Nov. 09, 2022
Shanghai Huahong Grace Semiconductor Manufacturing Corporation, Shanghai, CN;
Abstract
The present disclosure provides an RFLDMOS device and a manufacturing method thereof, by an etching process of adding dielectric layers between the Faraday shielding covers, interconnection of the multiple layers of Faraday shielding covers is realized, solving the problem that a parasitic resistance of a Faraday shielding cover may easily cause a greater feedback capacitance and introduce nonlinearity at a high frequency. The feedback capacitance and linearity of the RFLDMOS device at a high frequency are improved, and the broadband performance of the RFLDMOS device is improved.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile