The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2025
Filed:
Dec. 13, 2022
Applicant:
Shanghai Huahong Grace Semiconductor Manufacturing Corporation, Shanghai, CN;
Inventor:
Shufan Yan, Shanghai, CN;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/01 (2025.01); H01L 21/265 (2006.01); H10D 30/66 (2025.01); H10D 62/17 (2025.01); H10D 64/00 (2025.01); H10D 64/27 (2025.01);
U.S. Cl.
CPC ...
H10D 30/0297 (2025.01); H01L 21/26513 (2013.01); H10D 30/668 (2025.01); H10D 62/393 (2025.01); H10D 64/117 (2025.01); H10D 64/516 (2025.01);
Abstract
A shielded gate MOSFET device and a manufacturing method thereof is provided. In the method, the shielded gate thick dielectric layers are formed with the thick oxide layer process at the bottoms in the trenches, poly is deposited in each trench and is back etched to leave gate poly on the side wall of each trench, whereas the portion, right in the center of each trench, of the thin poly layer is removed to be filled with the contact hole dielectric layer, which achieves the effect of streamlining the process flow.