The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2023
Filed:
Jul. 07, 2020
Shanghai Huahong Grace Semiconductor Manufacturing Corporation, Shanghai, CN;
Hui Wang, Shanghai, CN;
Abstract
The present disclosure discloses a lithography process method for defining sidewall morphology of a lithography pattern, comprising: Step 1: designing a mask, wherein a mask pattern is formed on the mask, the mask pattern being used to define a lithography pattern; the lithography pattern has a sidewall, and a mask side face pattern structure that defines sidewall morphology of the lithography pattern is provided on the mask pattern, the mask side face pattern structure having a structure that enables an exposure light intensity to gradually change; Step 2: coating a to-be-exposed substrate with a photoresist; Step 3: exposing the photoresist by using the mask, and then performing development to form the lithography pattern; and Step 4: performing post-baking. The present disclosure can define the sidewall morphology of a lithography pattern, facilitating formation of a lithography pattern sidewall with an inclined side face.