The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2023
Filed:
Apr. 14, 2021
Hua Hong Semiconductor (Wuxi) Limited, Wuxi, CN;
Shanghai Huahong Grace Semiconductor Manufacturing Corporation, Shanghai, CN;
Chao Feng, Wuxi, CN;
Zhengrong Chen, Wuxi, CN;
Jia Pan, Shanghai, CN;
Tinghui Yao, Wuxi, CN;
Yu Jin, Wuxi, CN;
Hua Hong Semiconductor (Wuxi) Limited, Wuxi, CN;
Shanghai Huahong Grace Semiconductor Manufacturing Corporation, Shanghai, CN;
Abstract
A method for manufacturing an IGBT device includes: forming a source of the IGBT device in a substrate, wherein the substrate is an MCZ substrate; performing annealing processing on the substrate, wherein a layer of oxide is formed on the surface of the source during an annealing process; forming an interlayer dielectric layer on the substrate, wherein the interlayer dielectric layer is comprised of a silicon nitride layer, a first type oxide layer, and a second type oxide layer, and a material used to form the first type oxide layer is different from a material used to form the second type oxide layer; and performing nitrogen annealing processing on the substrate.