Chao Feng

Title: Chao Feng - Innovator in IGBT Device Manufacturing

Introduction

Chao Feng is a notable inventor based in Wuxi, China. He has made significant contributions to the field of semiconductor technology, particularly in the manufacturing of Insulated Gate Bipolar Transistor (IGBT) devices. His innovative methods have the potential to enhance the efficiency and performance of electronic devices.

Latest Patents

Chao Feng holds a patent for a method of manufacturing an IGBT device. This method involves several key steps, including the formation of a source in a substrate, which is an MCZ substrate. The process includes annealing the substrate to form an oxide layer on the source's surface. Additionally, an interlayer dielectric layer is created, consisting of a silicon nitride layer and two distinct oxide layers, each made from different materials. The final step involves nitrogen annealing processing on the substrate.

Career Highlights

Throughout his career, Chao Feng has worked with prominent companies in the semiconductor industry. He has been associated with Hua Hong Semiconductor (Wuxi) Limited and Shanghai Huahong Grace Semiconductor Manufacturing Corporation. His experience in these organizations has contributed to his expertise in semiconductor manufacturing processes.

Collaborations

Chao Feng has collaborated with notable professionals in the field, including Zhengrong Chen and Jia Pan. These collaborations have likely enriched his work and contributed to advancements in semiconductor technology.

Conclusion

Chao Feng is a distinguished inventor whose work in IGBT device manufacturing showcases his innovative spirit and technical expertise. His contributions to the semiconductor industry are noteworthy and reflect his commitment to advancing technology.