Yu Jin

Title: Yu Jin - Innovator in IGBT Device Manufacturing

Introduction

Yu Jin is a prominent inventor based in Wuxi, China. He has made significant contributions to the field of semiconductor technology, particularly in the manufacturing of Insulated Gate Bipolar Transistor (IGBT) devices. His innovative methods have paved the way for advancements in this critical area of electronics.

Latest Patents

Yu Jin holds a patent for a method of manufacturing an IGBT device. This method involves several key steps, including the formation of a source in a substrate, which is an MCZ substrate. The process includes annealing the substrate to form a layer of oxide on the source's surface. Additionally, an interlayer dielectric layer is created, consisting of a silicon nitride layer and two types of oxide layers, each made from different materials. The final step involves nitrogen annealing processing on the substrate. This patent showcases his expertise and innovative approach to semiconductor manufacturing.

Career Highlights

Throughout his career, Yu Jin has worked with notable companies in the semiconductor industry. He has been associated with Hua Hong Semiconductor (Wuxi) Limited and Shanghai Huahong Grace Semiconductor Manufacturing Corporation. His experience in these organizations has contributed to his development as a leading inventor in the field.

Collaborations

Yu Jin has collaborated with esteemed colleagues, including Chao Feng and Zhengrong Chen. These partnerships have further enhanced his work and innovation in semiconductor technology.

Conclusion

Yu Jin's contributions to the manufacturing of IGBT devices highlight his role as a key innovator in the semiconductor industry. His patent and career achievements reflect his dedication to advancing technology in this vital field.