Shanghai Huahong Grace Semiconductor Manufacturing Corporation

Hua Hong Semiconductor (Wuxi) Limited

Yu Jin

Jia Pan

Zhengrong Chen

Chao Feng

Tinghui Yao

A method for manufacturing an IGBT device includes: forming a source of the IGBT device in a substrate, wherein the substrate is an MCZ substrate; performing annealing processing on the substrate, wherein a layer of oxide is formed on the surface of the source during an annealing process; forming an interlayer dielectric layer on the substrate, wherein the interlayer dielectric layer is comprised of a silicon nitride layer, a first type oxide layer, and a second type oxide layer, and a material used to form the first type oxide layer is different from a material used to form the second type oxide layer; and performing nitrogen annealing processing on the substrate.

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Wuxi, China

Yu Jin