Tinghui Yao

Title: Innovations of Tinghui Yao in IGBT Device Manufacturing

Introduction

Tinghui Yao is a notable inventor based in Wuxi, China. He has made significant contributions to the field of semiconductor technology, particularly in the manufacturing of Insulated Gate Bipolar Transistor (IGBT) devices. His innovative methods have the potential to enhance the efficiency and performance of electronic devices.

Latest Patents

Tinghui Yao holds a patent for a method of manufacturing an IGBT device. This method involves several key steps, including forming a source of the IGBT device in a substrate made of MCZ material. The process includes annealing the substrate, which results in the formation of an oxide layer on the source's surface. Additionally, an interlayer dielectric layer is created, consisting of a silicon nitride layer and two distinct oxide layers, each made from different materials. The final step involves nitrogen annealing processing on the substrate, which further optimizes the device's performance.

Career Highlights

Throughout his career, Tinghui Yao has worked with prominent companies in the semiconductor industry. He has been associated with Hua Hong Semiconductor (Wuxi) Limited and Shanghai Huahong Grace Semiconductor Manufacturing Corporation. His experience in these organizations has allowed him to refine his skills and contribute to advancements in semiconductor manufacturing.

Collaborations

Tinghui Yao has collaborated with notable professionals in his field, including Chao Feng and Zhengrong Chen. These collaborations have likely facilitated the exchange of ideas and innovations, further enhancing the development of semiconductor technologies.

Conclusion

Tinghui Yao's contributions to the manufacturing of IGBT devices demonstrate his expertise and innovative spirit in the semiconductor industry. His patent and career achievements reflect his commitment to advancing technology in this critical field.