The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2025
Filed:
Feb. 21, 2023
Hua Hong Semiconductor (Wuxi) Limited, Wuxi, CN;
Shanghai Huahong Grace Semiconductor Manufacturing Corporation, Shanghai, CN;
Jialong Li, Wuxi, CN;
Ziquan Fang, Wuxi, CN;
Xiao Fan, Wuxi, CN;
Han Wang, Wuxi, CN;
Guanglong Chen, Wuxi, CN;
Wensheng Qian, Wuxi, CN;
Hua Hong Semiconductor (WUXI) Limited, Wuxi, CN;
Shanghai Huahong Grace Semiconductor Manufacturing Corporation, Shanghai, CN;
Abstract
An image sensor and a method for forming the image sensor are provided. The method includes: providing a substrate; patterning the substrate to form a plurality of columnar structures configured in an array, wherein a first trench, a second trench, and a third trench are configured between adjacent columnar structures and respectively along a first direction, a second direction, and a third direction, side walls of the columnar structures perpendicular to the first direction are (110) crystal faces, and oblique sections of the columnar structures perpendicular to the third direction are (100) crystal faces; and forming a doped epitaxial layer in the first trench, the second trench and the cross trench. Therefore, for the image sensor, an upper part of the cross trench is improved with little defects after the cross trench is full filled, which can effectively reduce white pixels and thus improve the performance of the image sensor.