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Shanghai, China

Shanghai Hua Hong Nec Electronics Company, Limited

USPTO Granted Patents = 53

Forward Citations = 103

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55 inventors (with patents filed for the assignee):

Wensheng Qian (24 out of 35 patents)

Donghua Liu (14 out of 17 patents)

Jun Hu (11 out of 42 patents)

4. Tzuyin Chiu (9 out of 9 patents)

5. Shengan Xiao (8 out of 9 patents)

6. Jing Shi (7 out of 15 patents)

7. Fan Chen (7 out of 26 patents)

8. Wenting Duan (7 out of 9 patents)

9. TungYuan Chu (5 out of 5 patents)

10. YungChieh Fan (5 out of 6 patents)

11. Nan Wang (4 out of 69 patents)

12. Xiongbin Chen (4 out of 5 patents)

13. Jiquan Liu (3 out of 11 patents)

14. Zhengliang Zhou (3 out of 5 patents)

15. Xiaobo Guo (3 out of 6 patents)

Core Competencies:

LDMOS Device

SiGe HBT

Superjunction Device

Bipolar Transistor

High-Voltage ESD Protection

Silicon-Germanium Heterojunction

Digital Correction Circuit

Trench Filling

PN-Junction Varactor

Parasitic PNP Transistor

Stacked Inductor

Nonvolatile Memory

53 patents: Sort by Forward Citations

1. 9478640 - LDMOS device with step-like drift region and fabrication method thereof (2016-10-25),

2. 9136374 - Method of fabricating P-type surface-channel LDMOS device with improved in-plane uniformity (2015-09-15),

3. 9123803 - Semiconductor device and method for fabricating the same (2015-09-01),

4. 9059277 - RF LDMOS device and fabrication method thereof (2015-06-16),

5. 9029948 - LDMOS device with step-like drift region and fabrication method thereof (2015-05-12),

6. 9012279 - SiGe HBT and method of manufacturing the same (2015-04-21),

7. 9000516 - Super-junction device and method of forming the same (2015-04-07),

8. 8907421 - Superjunction structure, superjunction MOS transistor and manufacturing method thereof (2014-12-09),

9. 8895404 - Method of back-side patterning (2014-11-25),

10. 8878370 - Bond pad structure (2014-11-04),

11. 8866189 - Silicon-germanium heterojunction bipolar transistor and manufacturing method thereof (2014-10-21),

12. 8853771 - Superjunction device (2014-10-07),

13. 8829650 - Zener diode in a SiGe BiCMOS process and method of fabricating the same (2014-09-09),

14. 8816400 - SiGe HBT having deep pseudo buried layer and manufacturing method thereof (2014-08-26),

15. 8803280 - High-voltage ESD protection device (2014-08-12),

Shanghai Hua Hong NEC Electronics Company, Limited is a leading semiconductor manufacturing company based in Shanghai, China. With a strong focus on research and development, the company specializes in the design, production, and distribution of integrated circuits (ICs) and other semiconductor products. Hua Hong NEC Electronics serves various industries including telecommunications, consumer electronics, automotive, and industrial automation. Their advanced manufacturing capabilities, innovative technologies, and commitment to quality have earned them a reputation as a trusted and reliable partner in the semiconductor industry.

This text is generated by artificial intelligence and may not be accurate.

Company Badge

USPTO Data Jan 1 1976 - Dec 23 2025

53 Patents

#57 in Shanghai

#554 in China

#12,944 in the World

Shanghai, China

Shanghai Hua Hong Nec Electronics Company, Limited

Forward Citations = 103

55 inventors:

Wensheng Qian (24 out of 35 patents)

Donghua Liu (14 out of 17 patents)

Jun Hu (11 out of 42 patents)

4. Tzuyin Chiu (9 out of 9 patents)

5. Shengan Xiao (8 out of 9 patents)

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