Shanghai, China

Tzuyin Chiu

USPTO Granted Patents = 9 

Average Co-Inventor Count = 4.7

ph-index = 4

Forward Citations = 41(Granted Patents)


Company Filing History:


Years Active: 2012-2014

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9 patents (USPTO):Explore Patents

Title: Innovations of Tzuyin Chiu in Semiconductor Technology

Introduction

Tzuyin Chiu is a prominent inventor based in Shanghai, China, known for his significant contributions to semiconductor technology. With a total of nine patents to his name, he has made remarkable advancements in the field of bipolar transistors.

Latest Patents

Among his latest patents is the invention of a silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) and its manufacturing method. This invention includes a substrate with two field oxide regions, pseudo buried layers, and a collector region that enhances the performance of the transistor. Another notable patent is for a high voltage bipolar transistor with pseudo buried layers, which improves the breakdown voltages by modifying the depletion region of the collector/base junction. This innovation represents a low-cost process that enhances the efficiency of bipolar transistors.

Career Highlights

Tzuyin Chiu is currently employed at Shanghai Hua Hong NEC Electronics Company, Limited, where he continues to develop cutting-edge technologies in the semiconductor industry. His work has been instrumental in advancing the capabilities of bipolar transistors, making them more efficient and cost-effective.

Collaborations

He has collaborated with notable coworkers such as Wensheng Qian and TungYuan Chu, contributing to various projects that push the boundaries of semiconductor technology.

Conclusion

Tzuyin Chiu's innovative work in semiconductor technology, particularly in bipolar transistors, showcases his expertise and commitment to advancing the field. His contributions are paving the way for future developments in electronics.

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