The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2012
Filed:
Dec. 28, 2010
Tzuyin Chiu, Shanghai, CN;
Tungyuan Chu, Shanghai, CN;
Yungchieh Fan, Shanghai, CN;
Wensheng Qian, Shanghai, CN;
Fan Chen, Shanghai, CN;
Jiong Xu, Shanghai, CN;
Haifang Zhang, Shanghai, CN;
Tzuyin Chiu, Shanghai, CN;
TungYuan Chu, Shanghai, CN;
YungChieh Fan, Shanghai, CN;
Wensheng Qian, Shanghai, CN;
Fan Chen, Shanghai, CN;
Jiong Xu, Shanghai, CN;
Haifang Zhang, Shanghai, CN;
Shanghai Hua Hong NEC Electronics Company, Limited, Shanghai, CN;
Abstract
This invention disclosed a novel manufacturing approach of collector and buried layer of a bipolar transistor. One aspect of the invention is that an oxide-nitride-oxide (ONO) sandwich structure is employed instead of oxide-nitride dual layer structure before trench etching. Another aspect is, through the formation of silicon oxide spacer in trench sidewall and silicon oxide remaining in trench bottom in the deposition and etch back process, the new structure hard mask can effectively protect active region from impurity implanted in ion implantation process.