Company Filing History:
Years Active: 2012-2013
Title: Jiong Xu - Innovator in Bipolar Transistor Manufacturing
Introduction
Jiong Xu is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor manufacturing, particularly in the development of bipolar transistors. With a total of 2 patents to his name, Xu's work has simplified manufacturing processes and reduced costs in the industry.
Latest Patents
Jiong Xu's latest patents include innovative manufacturing approaches for the collector and buried layer of bipolar transistors. The first patent discloses a method where a pseudo buried layer, known as the collector buried layer, is created through ion implantation and thermal annealing. This approach eliminates the need for deep trench isolation, thereby streamlining the manufacturing process. The second patent introduces a novel manufacturing technique that employs an oxide-nitride-oxide (ONO) sandwich structure instead of the traditional oxide-nitride dual layer structure. This new method effectively protects the active region from impurities during the ion implantation process.
Career Highlights
Xu is currently employed at Shanghai Hua Hong NEC Electronics Company, Limited, where he continues to innovate in semiconductor technology. His work has been instrumental in advancing manufacturing techniques that enhance efficiency and reduce costs.
Collaborations
Jiong Xu collaborates with notable colleagues, including Tzuyin Chiu and TungYuan Chu, who contribute to his research and development efforts in the field.
Conclusion
Jiong Xu's contributions to bipolar transistor manufacturing exemplify the impact of innovative thinking in technology. His patents not only advance the field but also pave the way for more cost-effective manufacturing solutions.