The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2013
Filed:
Dec. 28, 2010
Tzuyin Chiu, Shanghai, CN;
Tungyuan Chu, Shanghai, CN;
Yungchieh Fan, Shanghai, CN;
Wensheng Qian, Shanghai, CN;
Fan Chen, Shanghai, CN;
Jiong Xu, Shanghai, CN;
Haifang Zhang, Shanghai, CN;
Tzuyin Chiu, Shanghai, CN;
TungYuan Chu, Shanghai, CN;
YungChieh Fan, Shanghai, CN;
Wensheng Qian, Shanghai, CN;
Fan Chen, Shanghai, CN;
Jiong Xu, Shanghai, CN;
Haifang Zhang, Shanghai, CN;
Shanghai Hua Hong Nec Electronics Company, Limited, Shanghai, CN;
Abstract
This invention disclosed a manufacturing approach of collector and buried layer of a bipolar transistor. One aspect of the invention is that a pseudo buried layer, i.e, collector buried layer, is manufactured by ion implantation and thermal anneal. This pseudo buried layer has a small area, which makes deep trench isolation to divide pseudo buried layer unnecessary in subsequent process. Another aspect is, the doped area, i.e, collector, is formed by ion implantation instead of high cost epitaxy process. This invention simplified the manufacturing process, as a consequence, saved manufacturing cost.