The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2014
Filed:
Dec. 13, 2010
Tzuyin Chiu, Shanghai, CN;
Tungyuan Chu, Shanghai, CN;
Wensheng Qian, Shanghai, CN;
Yungchieh Fan, Shanghai, CN;
Jun HU, Shanghai, CN;
Donghua Liu, Shanghai, CN;
Yukun LV, Shanghai, CN;
Tzuyin Chiu, Shanghai, CN;
TungYuan Chu, Shanghai, CN;
Wensheng Qian, Shanghai, CN;
YungChieh Fan, Shanghai, CN;
Jun Hu, Shanghai, CN;
Donghua Liu, Shanghai, CN;
Yukun Lv, Shanghai, CN;
Shanghai Hua Hong NEC Electronics Company, Limited, Shanghai, CN;
Abstract
A high voltage bipolar transistor with shallow trench isolation (STI) comprises the areas of a collector formed by implanting first electric type impurities into active area and connected with pseudo buried layers at two sides; Pseudo buried layers which are formed by implanting high dose first type impurity through the bottoms of STI at two sides if active area, and do not touch directly; deep contact through field oxide to contact pseudo buried layers and pick up the collectors; a base deposited on the collector by epitaxial growth and in-situ doped by second electric type impurity, in which the intrinsic base touches local collector and extrinsic base is used for base pick-up; a emitter which is a polysilicon layer deposited on the intrinsic base and doped with first electric type impurities. This invention makes the depletion region of collector/base junction from 1D (vertical) distribution to 2D (vertical and lateral) distribution. The bipolar transistor's breakdown voltages are increased by only enlarge active critical dimension (CD). This is low-cost process.