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For the Inventor, By the Inventor

Shanghai, China

Donghua Liu

This inventor holds 17 USPTO granted patents and 3 published patent applications, primarily in Silicon-Germanium Transistors. Top assignees: Shanghai Hua Hong Nec Electronics Company, Limited, Shanghai Huahong Grace Semiconductor Manufacturing Corporation, Shanghai Hua Hong Nec Electronics. Active years: 2013-2018.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Donghua Liu. Retrieved from https://idiyas.com/inventor/donghua-liu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 17 

% Patents Active = 100.0

Average Co-Inventor Count = 3.7

ph-index = 3

Forward Citations = 21(Granted Patents)


Company Filing History:

goldMedal14 out of 53 
 
Shanghai Hua Hong Nec Electronics Company, Limited
 patents
silverMedal2 out of 128 
 
Shanghai Huahong Grace Semiconductor Manufacturing Corporation
 patents
bronzeMedal1 out of 3 
 
Shanghai Hua Hong Nec Electronics
 patents

Years Active: 2013-2018

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Areas of Expertise:
NLDMOS Device
SiGe HBT
Zener Diode
BiCMOS Process
High Voltage
Parasitic PNP
Manufacturing Method
Ultra-High Voltage
17 patents (USPTO):Explore Patents
1. 9997626 - NLDMOS device and method for manufacturing the same (2018-06-12),
2. 9484455 - Isolation NLDMOS device and a manufacturing method therefor (2016-11-01),
3. 9012279 - SiGe HBT and method of manufacturing the same (2015-04-21),
4. 8866189 - Silicon-germanium heterojunction bipolar transistor and manufacturing method thereof (2014-10-21),
5. 8829650 - Zener diode in a SiGe BiCMOS process and method of fabricating the same (2014-09-09),
6. 8785977 - High speed SiGe HBT and manufacturing method thereof (2014-07-22),
7. 8779473 - SiGe HBT device and manufacturing method of the same (2014-07-15),
8. 8759880 - Ultra-high voltage SIGE HBT device and manufacturing method of the same (2014-06-24),
9. 8748238 - Ultra high voltage SiGe HBT and manufacturing method thereof (2014-06-10),
10. 8674480 - High voltage bipolar transistor with pseudo buried layers (2014-03-18),
11. 8637959 - Vertical parasitic PNP device in a BiCMOS process and manufacturing method of the same (2014-01-28),
12. 8598678 - Parasitic vertical PNP bipolar transistor and its fabrication method in BiCMOS process (2013-12-03),
13. 8592870 - Pseudo buried layer and manufacturing method of the same, deep hole contact and bipolar transistor (2013-11-26),
14. 8455975 - Parasitic PNP bipolar transistor in a silicon-germanium BiCMOS process (2013-06-04),
15. 8421185 - Parasitic vertical PNP bipolar transistor in BiCMOS process (2013-04-16),

Title: Innovations of Donghua Liu in Semiconductor Technology

Introduction

Donghua Liu is a prominent inventor based in Shanghai, China, known for his significant contributions to semiconductor technology. With a total of 17 patents to his name, Liu has made remarkable advancements in the field, particularly in the development of NLDMOS devices.

Latest Patents

Liu's latest patents include the "NLDMOS device and method for manufacturing the same," which describes an NLDMOS device featuring a drift region, a P well, and two PTOP layers. The design ensures that the first PTOP layer has the same lateral size as the second PTOP layer, with specific spatial arrangements that enhance device performance. Another notable patent is the "Isolation NLDMOS device and a manufacturing method therefor," which outlines an isolation NLDMOS device comprising an N well and a P well on a P substrate, along with various heavily doped regions and field oxides that optimize the device's functionality.

Career Highlights

Throughout his career, Donghua Liu has worked with leading companies in the semiconductor industry, including Shanghai Hua Hong NEC Electronics Company and Shanghai Huahong Grace Semiconductor Manufacturing Corporation. His experience in these organizations has allowed him to refine his expertise and contribute to groundbreaking innovations.

Collaborations

Liu has collaborated with notable colleagues in the field, including Wensheng Qian and Jun Hu. These partnerships have foster

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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