Shanghai, China

Donghua Liu

USPTO Granted Patents = 17 

Average Co-Inventor Count = 3.7

ph-index = 3

Forward Citations = 21(Granted Patents)


Company Filing History:


Years Active: 2013-2018

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17 patents (USPTO):Explore Patents

Title: Innovations of Donghua Liu in Semiconductor Technology

Introduction

Donghua Liu is a prominent inventor based in Shanghai, China, known for his significant contributions to semiconductor technology. With a total of 17 patents to his name, Liu has made remarkable advancements in the field, particularly in the development of NLDMOS devices.

Latest Patents

Liu's latest patents include the "NLDMOS device and method for manufacturing the same," which describes an NLDMOS device featuring a drift region, a P well, and two PTOP layers. The design ensures that the first PTOP layer has the same lateral size as the second PTOP layer, with specific spatial arrangements that enhance device performance. Another notable patent is the "Isolation NLDMOS device and a manufacturing method therefor," which outlines an isolation NLDMOS device comprising an N well and a P well on a P substrate, along with various heavily doped regions and field oxides that optimize the device's functionality.

Career Highlights

Throughout his career, Donghua Liu has worked with leading companies in the semiconductor industry, including Shanghai Hua Hong NEC Electronics Company and Shanghai Huahong Grace Semiconductor Manufacturing Corporation. His experience in these organizations has allowed him to refine his expertise and contribute to groundbreaking innovations.

Collaborations

Liu has collaborated with notable colleagues in the field, including Wensheng Qian and Jun Hu. These partnerships have foster

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