The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2014
Filed:
Jun. 06, 2013
Shanghai Hua Hong Nec Electronics Co., Ltd, Shanghai, CN;
Jing Shi, Shanghai, CN;
Donghua Liu, Shanghai, CN;
Jun Hu, Shanghai, CN;
Wensheng Qian, Shanghai, CN;
Wenting Duan, Shanghai, CN;
Fan Chen, Shanghai, CN;
Shanghai Hua Hong NEC Electronics Co., Ltd., Shanghai, CN;
Abstract
An ultra-high voltage silicon-germanium (SiGe) heterojunction bipolar transistor (HBT), which includes: a P-type substrate; an N-type matching layer, a P-type matching layer and an N− collector region stacked on the P-type substrate from bottom up; two field oxide regions separately formed in the N− collector region; N+ pseudo buried layers, each under a corresponding one of the field oxide regions and in contact with each of the N-type matching layer, the P-type matching layer and the N− collector region; an N+ collector region between the two field oxide regions and through the N− collector region and the P-type matching layer and extending into the N-type matching layer; and deep hole electrodes, each in a corresponding one of the field oxide regions and in contact with a corresponding one of the N+ pseudo buried layers. A method of fabricating an ultra-high voltage SiGe HBT is also disclosed.