Wenting Duan

Title: Wenting Duan: Innovator in NLDMOS Technology

Introduction

Wenting Duan is a prominent inventor based in Shanghai, China, known for his significant contributions to the field of semiconductor technology. With a total of nine patents to his name, Duan has made remarkable advancements in the design and manufacturing of NLDMOS devices.

Latest Patents

Duan's latest patents include innovative designs for NLDMOS devices. One of his notable inventions is an NLDMOS device that features a drift region, a P well, and two PTOP layers. This design ensures that the first PTOP layer has the same lateral size as the second PTOP layer, with specific spatial arrangements that enhance device performance. Additionally, he has developed an isolation NLDMOS device that incorporates an N well and a P well on a P substrate, along with various heavily doped regions and field oxides, showcasing his expertise in semiconductor fabrication.

Career Highlights

Throughout his career, Wenting Duan has worked with leading companies in the semiconductor industry, including Shanghai Hua Hong NEC Electronics Company and Shanghai Huahong Grace Semiconductor Manufacturing Corporation. His experience in these organizations has allowed him to refine his skills and contribute to cutting-edge technology in the field.

Collaborations

Duan has collaborated with notable colleagues, including Donghua Liu and Wensheng Qian, who have played a role in his research and development efforts. Their teamwork has fostered an environment of innovation and creativity in their projects.

Conclusion

Wenting Duan's contributions to NLDMOS technology and his extensive patent portfolio highlight his role as a key innovator in the semiconductor industry. His work continues to influence advancements in this critical field.