The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2014
Filed:
Sep. 10, 2012
Shengan Xiao, Shanghai, CN;
Shengan Xiao, Shanghai, CN;
Shanghai Hua Hong NEC Electronics Co., Ltd., Shanghai, CN;
Abstract
A superjunction structure with unevenly doped P-type pillars () and N-type pillars () is disclosed. The N-type pillars () have uneven impurity concentrations in the vertical direction and the P-type pillars () have two or more impurity concentrations distributed both in the vertical and lateral directions to ensure that the total quantity of P-type impurities in the P-type pillars () close to the substrate () is less than that of N-type impurities in the N-type pillars close to the substrate; the total quantity of P-type impurities in the P-type pillars close to the top of the device is greater than that of N-type impurities in the N-type pillars close to the top. A superjunction MOS transistor and manufacturing method of the same are also disclosed. The superjunction structure can improve the capability of sustaining current-surge of a device without affecting or may even reduce the on-resistance of the device.