The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2015
Filed:
Aug. 16, 2013
Shanghai Hua Hong Nec Electronics Co., Ltd., Shanghai, CN;
Shengan Xiao, Shanghai, CN;
SHANGHAI HUA HONG NEC ELECTRONICS CO., LTD., Shanghai, CN;
Abstract
A semiconductor device includes: a P+ substrate; a P− epitaxial layer over the P+ substrate; a P-well and an N− drift region in the P− epitaxial layer and laterally adjacent to each other; an N+ source region in the P-well and connected to a front-side metal via a first contact electrode; an N+ drain region in the N− drift region and connected to the front-side metal via a second contact electrode; a gate structure on the P− epitaxial layer and connected to the front-side metal via a third contact electrode; and a metal plug through the P− epitaxial layer and having one end in contact with the P+ substrate and the other end connected to the front-side metal, the metal plug being adjacent to one side of the N+ source region that is farther from the N− drift region. A method for fabricating the semiconductor device is also disclosed.