The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2015
Filed:
May. 22, 2013
Applicant:
Shanghai Hua Hong Nec Electronics Co., Ltd, Shanghai, CN;
Inventor:
Wensheng Qian, Shanghai, CN;
Assignee:
SHANGHAI HUA HONG NEC ELECTRONICS, Shanghai, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/732 (2006.01); H01L 29/73 (2006.01); H01L 29/66 (2006.01); H01L 29/737 (2006.01); H01L 29/08 (2006.01); H01L 21/763 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/73 (2013.01); H01L 29/0821 (2013.01); H01L 29/66234 (2013.01); H01L 29/66242 (2013.01); H01L 29/7378 (2013.01); H01L 21/763 (2013.01); H01L 29/41708 (2013.01);
Abstract
A structure for picking up a collector region including a pair of polysilicon stacks formed in the isolation regions and extending below the collector region; and a pair of collector electrodes contacting on the polysilicon stacks, wherein the pair of polysilicon stacks includes: an undoped polysilicon layer and a doped polysilicon layer located on the undoped polysilicon layer, wherein a depth of the doped polysilicon layer is greater than a depth of the collector region; the depth of the collector region is greater than a depth of the isolation regions.