IDiyas

For the Inventor, By the Inventor

Hsinchu, Taiwan

Wen-Han Wang

USPTO Granted Patents = 15

Average Co-Inventor Count = 2.0

ph-index = 6

Forward Citations = 185(Granted Patents)


Location History:

  • Hsinchu City, TW (2010)
  • Hsinchu, TW (2007 - 2020)

Company Filing History:

goldMedal6 out of 9,138 
 
Industrial Technology Research Institute
 patents
silverMedal6 out of 40,635 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
bronzeMedal2 out of 2,305 
 
Nan Ya Technology Corporation
 patents
4. 1 out of 269 
 
Powerchip Semiconductor Corporation
 patents
5. 1 out of 357 
 
Promos Technologies, Inc
 patents
6. 1 out of 2,029 
 
Winbond Electronics Corporation
 patents
7. 1 out of 104 
 
Windbond Electronics Corp.
 patents
8. 2 out of 832,680 
Other
 patents
where one patent can have more than one assignee

Years Active: 2007-2020

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15 patents (USPTO):Explore Patents
1. 10637463 - Voltage level shifting circuits and methods (2020-04-28),
2. 9806611 - Voltage generating circuits based on a power-on control signal (2017-10-31),
3. 9628080 - Voltage generating circuits based on a power-on control signal (2017-04-18),
4. 9184586 - SiGe based gate driven PMOS trigger circuit (2015-11-10),
5. 8648425 - Resistors formed based on metal-oxide-semiconductor structures (2014-02-11),
6. 8207755 - Low leakage power detection circuit (2012-06-26),
7. 7923286 - Method of fabricating a phase-change memory (2011-04-12),
8. 7868314 - Phase change memory device and fabricating method therefor (2011-01-11),
9. 7835177 - Phase change memory cell and method of fabricating (2010-11-16),
10. 7670871 - Method of fabricating a phase-change memory (2010-03-02),
11. 7643373 - Driving method and system for a phase change memory (2010-01-05),
12. 7626191 - Lateral phase change memory with spacer electrodes (2009-12-01),
13. 7598113 - Phase change memory device and fabricating method therefor (2009-10-06),
14. 7569845 - Phase-change memory and fabrication method thereof (2009-08-04),
15. 7254059 - Multilevel phase-change memory element and operating method (2007-08-07),
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