The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2009
Filed:
Oct. 24, 2006
Yi-chan Chen, Yunlin County, TW;
Wen-han Wang, Hsinchu, TW;
Yi-Chan Chen, Yunlin County, TW;
Wen-Han Wang, Hsinchu, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Powerchip Semiconductor Corp., Hsin-Chu, TW;
Nanya Technology Corporation, Taoyuan, TW;
ProMOS Technologies Inc., Hsinchu, TW;
Winbond Electronics Corp., Hsinchu, TW;
Abstract
A phase-change memory comprises a bottom electrode formed on a substrate. A first isolation layer is formed on the bottom electrode. A top electrode is formed on the isolation layer. A first phase-change material is formed in the first isolation layer, wherein the top electrode and the bottom electrode are electrically connected via the first phase-change material. Since the phase-change material can have a diameter less than the resolution limit of the photolithography process, an operating current for a state conversion of the phase-change material pattern may be reduced so as to decrease a power dissipation of the phase-change memory device.