The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 07, 2007

Filed:

Jul. 18, 2005
Applicants:

Chien-ming LI, Hsinchu, TW;

Wen-han Wang, Hsinchu, TW;

Kuei-hung Shen, Hsinchu, TW;

Inventors:

Chien-Ming Li, Hsinchu, TW;

Wen-Han Wang, Hsinchu, TW;

Kuei-Hung Shen, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01);
U.S. Cl.
CPC ...
Abstract

A multilevel phase change memory element and operating method and electrodes, which are configured in a parallel structure to form a memory cell. A voltage-drive mode is employed to control and drive the memory element such that multilevel memory states may be achieved by imposing different voltage levels. The provided multilevel phase-change memory element has more bits and higher capacity than that of a memory element with a single phase-change layer.


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