The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 2010
Filed:
Jul. 27, 2006
Hong-hui Hsu, Hsinchu, TW;
Chien-min Lee, Hsinchu, TW;
Wen-han Wang, Hsinchu, TW;
Min-hung Lee, Hsinchu, TW;
Te-sheng Chao, Hsinchu, TW;
Yen Chuo, Hsinchu, TW;
Yi-chan Chen, Hsinchu, TW;
Wei-su Chen, Hsinchu, TW;
Hong-Hui Hsu, Hsinchu, TW;
Chien-Min Lee, Hsinchu, TW;
Wen-Han Wang, Hsinchu, TW;
Min-Hung Lee, Hsinchu, TW;
Te-Sheng Chao, Hsinchu, TW;
Yen Chuo, Hsinchu, TW;
Yi-Chan Chen, Hsinchu, TW;
Wei-Su Chen, Hsinchu, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A phase change memory (PCM) cell fabricated by etching a tapered structure into a phase change layer, and planarizing a dielectric layer on the phase change layer until a tip of the tapered structure is exposed for contacting a heating electrode. Therefore, the area of the exposed tip of the phase change layer is controlled to be of an extremely small size, the contact area between the phase change layer and the heating electrode is reduced, thereby lowering the operation current.